JPH0132666B2 - - Google Patents
Info
- Publication number
- JPH0132666B2 JPH0132666B2 JP55106639A JP10663980A JPH0132666B2 JP H0132666 B2 JPH0132666 B2 JP H0132666B2 JP 55106639 A JP55106639 A JP 55106639A JP 10663980 A JP10663980 A JP 10663980A JP H0132666 B2 JPH0132666 B2 JP H0132666B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- epitaxial layer
- emitter
- conductivity type
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10663980A JPS5731173A (en) | 1980-08-01 | 1980-08-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10663980A JPS5731173A (en) | 1980-08-01 | 1980-08-01 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5731173A JPS5731173A (en) | 1982-02-19 |
JPH0132666B2 true JPH0132666B2 (en]) | 1989-07-10 |
Family
ID=14438680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10663980A Granted JPS5731173A (en) | 1980-08-01 | 1980-08-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5731173A (en]) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0638471B2 (ja) * | 1987-02-09 | 1994-05-18 | 三菱電機株式会社 | 半導体装置 |
JPH088261B2 (ja) * | 1988-11-17 | 1996-01-29 | 三洋電機株式会社 | 半導体集積回路 |
-
1980
- 1980-08-01 JP JP10663980A patent/JPS5731173A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5731173A (en) | 1982-02-19 |
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